期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1999, vol.20, no.1 1999, vol.20, no.10 1999, vol.20, no.11 1999, vol.20, no.12 1999, vol.20, no.2 1999, vol.20, no.3
1999, vol.20, no.4 1999, vol.20, no.5 1999, vol.20, no.6 1999, vol.20, no.7 1999, vol.20, no.8 1999, vol.20, no.9

题名作者出版年年卷期
A novel emitter-sharpened double-gate race-track-shaped field emitter structureBaoping Wang; Zhongping Huang; Johnny K. O. Sin; Vincent M. C. Poon; Yongming Tang; Chen Wang; Kunxing Xue; Linsu Tong19991999, vol.20, no.12
A novel planarized, silicon trench sidewall oxide-merged p-i-n Schottky (TSOX-MPS) rectifierRajesh N. Gupta; W. G. Min; T. P. Chow19991999, vol.20, no.12
An efficient low voltage, high frequency silicon CMOS light emitting device and electro-optical interfaceL. W. Snyman; M. du Plessis; E. Seevinck; H. Aharoni19991999, vol.20, no.12
Counter-doped MOSFET's of 4H-SiCKatsunori Ueno; Tadaaki Oikawa19991999, vol.20, no.12
Experimental evaluation of impact ionization coefficients in GaNKazuaki Kunihiro; Kensuke Kasahara; Yuji Takahashi; Yasuo Ohno19991999, vol.20, no.12
High channel mobility in inversion layers of 4H-SiC MOSFET's by utilizing (1120) faceHiroshi Yano; Taichi Hirao; Tsunenobu Kimoto; Hiroyuki Matsunami; Katsunori Asano; Yoshitaka Sugawara19991999, vol.20, no.12
Improvement in hot carrier lifetime as a function of N{sub}2 ion implantation before gate oxide growth in deep submicron NMOS devicesFernando J. Guarin; Stewart E. Rauch; III; Giuseppe La Rosa; Kevin Brelsford19991999, vol.20, no.12
Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFET'sW. Kirklen Henson; Nian Yang; Jimmie J. Wortman19991999, vol.20, no.12
Room temperature single electron effects in a Si nano-crystal memoryIlgweon Kim; Sangyeon Han; Kwangseok Han; Jongho Lee; Hyungcheol Shin19991999, vol.20, no.12
Shallow p{sup}+n junctions formed by using a two-step annealing scheme with low thermal budgetM. H. Juang; S. C. Harn19991999, vol.20, no.12
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