期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998~2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1999, vol.20, no.1 1999, vol.20, no.10 1999, vol.20, no.11 1999, vol.20, no.12 1999, vol.20, no.2 1999, vol.20, no.3
1999, vol.20, no.4 1999, vol.20, no.5 1999, vol.20, no.6 1999, vol.20, no.7 1999, vol.20, no.8 1999, vol.20, no.9

题名作者出版年年卷期
A novel approach for introducing the electron-electron and electron-impurity interactions in particle-based simulationsW. J. Gross; D. Vasileska; D. K. Ferry19991999, vol.20, no.9
A P-channel poly-Si/Si{sub}1-xGe{sub}x/Si sandwiched conductivity modulated thin-film transistorChunxiang Zhu; Johnny K. O. Sin19991999, vol.20, no.9
A self-aligned offset polysilicon thin-film transistor using photoresist reflowJung-In Han; Chul-Hi Han19991999, vol.20, no.9
Amorphous silicon thin-film transistors on compliant polyimide foil substratesHelena Gleskova; Sigurd Wagner19991999, vol.20, no.9
Anomalous B penetration through ultrathin gate oxides during rapid thermal annealingRichard B. Fair19991999, vol.20, no.9
Demonstration of submicron depletion-mode GaAs MOSFET's with negligible drain current drift and hysteresisY. C. Wang; M. Hong; J. M. Kuo; J. P. Mannaerts; J. Kwo; H. S. Tsai; J. J. Krajewski; Y. K. Chen; A. Y. Cho19991999, vol.20, no.9
Determining the effectiveness of HBT emitter ledge passivation by using an on-ledge schottky diode potentiometerPingxi Ma; Peter Zampardi; Liyang Zhang; M. F. Chang19991999, vol.20, no.9
Effects of nitridation pressure on the characteristics of gate dielectrics annealed in N{sub}2O ambientMoon-Sig Joo; In-Seok Yeo; Chan-Ho Lee; Heung-Jae Cho; Se-Aug Jang; Sahng-Kyoo Lee19991999, vol.20, no.9
Evaluation of the temperature stability of AlGaN/GaN heterostructure FET'sI. Daumiller; C. Kirchner; M. Kamp; K. J. Ebeling; E. Kohn19991999, vol.20, no.9
Floating body induced pre-kink excess low-frequency noise in submicron SOI CMOSFET technologyYing-Che Tseng; W. Margaret Huang; Vida Ilderem; Jason C. S. Woo19991999, vol.20, no.9
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