期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1999, vol.20, no.1 1999, vol.20, no.10 1999, vol.20, no.11 1999, vol.20, no.12 1999, vol.20, no.2 1999, vol.20, no.3
1999, vol.20, no.4 1999, vol.20, no.5 1999, vol.20, no.6 1999, vol.20, no.7 1999, vol.20, no.8 1999, vol.20, no.9

题名作者出版年年卷期
25-nm p-channel vertical MOSFET's with SiGeC source-drainsMin Yang; Chia-Lin Chang; Malcolm Carroll; J. C. Sturm19991999, vol.20, no.6
A function-fit model for the soft breakdown failure modeEnrique Miranda; Jordi Sune; Rosana Rodriguez; Montsettat Nafria; Xavier Aymerich19991999, vol.20, no.6
AlGaN/GaN heterojunction bipolar transistorL. S. McCarthy; P. Kozodoy; M. J. W. Rodwell; S. P. Denbaars; U. K. Mishra19991999, vol.20, no.6
Anomalous effect of trench-oxide depth on alpha-particle-induced charge collectionHyungsoon Shin; Nak-Myeong Kim19991999, vol.20, no.6
Direct observation of excess carrier distribution in 4H-SiC power diodesA. Galeckas; O. Tornblad; J. Linnros; B. Breitholtz19991999, vol.20, no.6
Evidence of hole direct tunneling through ultrathin gate oxide using P{sub}+ poly-SiGe gateWen-Chin Lee; Tsu-Jae King; Chenming Hu19991999, vol.20, no.6
Fast organic thin-film transistor circuitsHagen Klauk; David J. Gundlach; Thomas N. Jackson19991999, vol.20, no.6
High-performance, graded-base AlGaAs/InGaAs collector-Up heterojunction bipolar transistors using a novel selective area regrowth processH. C. Tseng; Y. Z. Ye19991999, vol.20, no.6
MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)Chang-Hoon Choi; Jung-Suk Goo; Tae-Young Oh; Zhiping Yu; Robert W. Dutton; Amr Bayoumi; Min Cao; Pau19991999, vol.20, no.6
MOSFET simulation with quantum effects and nonlocal mobility modelAlessandro S. Spinelli; Augusto Benvenuti; Stefano Villa; Andrea L. Lacaita19991999, vol.20, no.6
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