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期刊
ISSN
0741-3106
刊名
IEEE Electron Device Letters
参考译名
IEEE电子器件快报
收藏年代
1998~2007
全部
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
1999, vol.20, no.1
1999, vol.20, no.10
1999, vol.20, no.11
1999, vol.20, no.12
1999, vol.20, no.2
1999, vol.20, no.3
1999, vol.20, no.4
1999, vol.20, no.5
1999, vol.20, no.6
1999, vol.20, no.7
1999, vol.20, no.8
1999, vol.20, no.9
题名
作者
出版年
年卷期
A leakage current mechanism caused by the interaction of residual oxidation stress and high-energy ion implantation impact in advanced CMOS technology
Hyeokjae Lee; Jeong Mo Hwang; Young June Park; Hong Shick Min
1999
1999, vol.20, no.5
A new extrapolation law for data-retention time-to-failure of nonvolatile memories
B. De Salvo; G. Ghibaudo; G. Pananakakis; B. Guillaumot; P. Canedelier; G. Reimbold
1999
1999, vol.20, no.5
An 0.03-μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f{sub}T and 2 S/mm extrinsic transconductance
D. Xu; T. Suemitsu; J. Osaka; Y. Umeda; Y. Yamane; Y. Ishii; T. Ishii; T. Tamamura
1999
1999, vol.20, no.5
An electrically modifiable synapse array composed of metal-ferroelectric-semiconductor (MFS) FET's using SrBi{sub}2Ta{sub}2O{sub}9 thin films
Sung-Min Yoon; Eisuke Tokumitsu; Hiroshi Ishiwara
1999
1999, vol.20, no.5
Carrier lifetime extraction in fully depleted dual-gate SOI devices
T. Ernst; A. Vandooren; S. Cristoloveanu; J. -P. Colinge; D. Flandre
1999
1999, vol.20, no.5
Direct ion-implanted 0.12-μm GaAs MESFET with f{sub}t of 121 GHz and f{sub}max of 160 GHz
H. Hsia; Z. Tang; D. Caruth; D. Becher; M. Feng
1999
1999, vol.20, no.5
Enhancement of integrity of polysilicon oxide by using a combination of N{sub}2O nitridation and CMP process
Tan Fu Lei; Jiann Heng Chen; Ming Fang Wang; Tien Sheng Chao
1999
1999, vol.20, no.5
Enhancement of PMOS device performance with poly-SiGe gate
Wen-Chin Lee; Bryan Watson; Tsu-Jae King; Chenming Hu
1999
1999, vol.20, no.5
Fabrication and characterization of sub-quarter-micron MOSFET's with a copper gate electrode
Y. Ma; D. R. Evans; T. Nguyen; Y. Ono; S. T. Hsu
1999
1999, vol.20, no.5
High current density 800-V 4H-SiC gate turn-off thyristors
B. Li; L. Cao; J. H. Zhao
1999
1999, vol.20, no.5
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