期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1999, vol.20, no.1 1999, vol.20, no.10 1999, vol.20, no.11 1999, vol.20, no.12 1999, vol.20, no.2 1999, vol.20, no.3
1999, vol.20, no.4 1999, vol.20, no.5 1999, vol.20, no.6 1999, vol.20, no.7 1999, vol.20, no.8 1999, vol.20, no.9

题名作者出版年年卷期
1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistanceF. Udrea; S. S. M. Chan; J. Thomson; T. Trajkovic; P. R. Waind; G. A. J. Amaratunga; D. E. Crees19991999, vol.20, no.8
A 475-V high-voltage 6H-SiC lateral MOSFETN. S. Saks; S. S. Mani; A. K. Agarwal; M. G. Ancona19991999, vol.20, no.8
A comparison of hydrogen and deuterium plasma treatment effects on polysilicon TFT performance and DC reliabilityYeh-Jiun Tung; James Boyce; Jackson Ho; Xuejue Huang; Tsu-Jae King19991999, vol.20, no.8
A long-refresh dynamic/quasi-nonvolatile memory device with 2-nm tunneling oxideYa-Chin King; Tsu-Jae King; Chenming Hu19991999, vol.20, no.8
A new self-aligned offset staggered polysilicon thin-film transistorJung-In Han; Gi-Young Yang; Chul-Hi Han19991999, vol.20, no.8
A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase depositionPo-Sheng Shih; Chun-Yen Chang; Ting-Chang Chang; Tiao-Yuan Huang; Du-Zen Peng; Ching-Fa Yeh19991999, vol.20, no.8
A thermodynamic noise model for nonlinear resistorsLaurens Weiss; Wolfgang Mathis19991999, vol.20, no.8
An analytical thermal noise model of deep submicron MOSFET'sPeter Klein19991999, vol.20, no.8
Dependence of Si PN junction perimeter leakage on the channel-stop boron dose and interlayer materialShinji Fujieda; Hajime Nobusawa; Masayuki Hamada; Takaho Tanigawa19991999, vol.20, no.8
Design and characterization of high-voltage self-clamped IGBT'sZ. John Shen; Dave Briggs; Stephen P. Robb19991999, vol.20, no.8
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