期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2000, vol.21, no.1 2000, vol.21, no.10 2000, vol.21, no.11 2000, vol.21, no.12 2000, vol.21, no.2 2000, vol.21, no.3
2000, vol.21, no.4 2000, vol.21, no.5 2000, vol.21, no.6 2000, vol.21, no.7 2000, vol.21, no.8 2000, vol.21, no.9

题名作者出版年年卷期
Analog and digital circuits using organic thin-film transistors on polyester substratesM. G. Kane; J. Campi; M. S. Hammond; F. P. Cuomo; B. Greening; C. D. Sheraw; J. A. Nichols; D. J. Gundlach; J. R. Huang; C. C. Kuo; L. Jia; H. Klauk; T. N. Jackson20002000, vol.21, no.11
Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectricYee Chia Yeo; Qiang Lu; Wen Chin Lee; Tsu-Jae King; Chenming Hu; Xiewen Wang; Xin Guo; T. P. Ma20002000, vol.21, no.11
Enhancement mode metamorphic Al{sub}0.67In{sub}0.33As/Ga{sub}0.66In{sub}0.34As HEMT on GaAs substrate with high breakdown voltageM. Boudrissa; E. Delos; Y. Cordier; D. Theron; J. C. De Jaeger20002000, vol.21, no.11
Experimental observation of velocity overshoot in n-channel AlGaAs/InGaAs/GaAs enhancement mode MODFETsMatthias Passlack; Jonathan K. Abrokwah; Rodolfo Lucero20002000, vol.21, no.11
Fabrication and characterization of metal-oxide-semiconductor field-effect transistors and gated diodes using Ta{sub}2O{sub}5 gate oxideJing-Chi Yu; Benjamin Chihming Lai; Joseph Ya-min Lee20002000, vol.21, no.11
Influence of reactive ion etching on the microwave trap noise generated in Pt/n-GaAs Schottky diode interfacesJ. M. Miranda; C. -I. Lin; M. Brandt; M. Rodriguez-Girones; H. L. Hartnagel; J. L. Sebastian20002000, vol.21, no.11
Low electric field hole impact ionization coefficients in GaInAs and GaInAsPN. Shamir; D. Ritter20002000, vol.21, no.11
NROM: a novel localized trapping, 2-bit nonvolatile memory cellBoaz Eitan; Paolo Pavan; Ilan Bloom; Efraim Aloni; Aviv Frommer; David Finzi20002000, vol.21, no.11
Source identification and control of 1/f noise in AlGaAs/GaAs HBTs by using an on-ledge Schottky diodePingxi Ma; M. F. Chang; Peter Zampardi; Philip Canfield; Jerry Sheu; G. P. Li20002000, vol.21, no.11
Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistorWen-Chau Liu; Hsi-Jen Pan; Wei-Chou Wang; Kong-Beng Thei; Kwun-Wei Lin; Kuo-Hui Yu; Chin-Chuan Cheng20002000, vol.21, no.11
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