期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2000, vol.21, no.1 2000, vol.21, no.10 2000, vol.21, no.11 2000, vol.21, no.12 2000, vol.21, no.2 2000, vol.21, no.3
2000, vol.21, no.4 2000, vol.21, no.5 2000, vol.21, no.6 2000, vol.21, no.7 2000, vol.21, no.8 2000, vol.21, no.9

题名作者出版年年卷期
An anomalous crossover in Vth roll-off for indium-doped nMOSFETsSun-Jay Chang; Chun-Yen Chang; Coming Chen; Jih-Wen Chou; Tien-Sheng Chao; Tiao-Yuan Huang20002000, vol.21, no.9
Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETsSang-Hyun Oh; Don Monroe; J. M. Hergenrother20002000, vol.21, no.9
Demonstration of aluminum-free metamorphic InP/In{sub}0.53Ga{sub}0.47As/InP double heterojunction bipolar transistors on GaAs substratesHong Wang; Geok Ing Ng; Haiqun Zheng; Yong Zhong Xiong; Lye Heng Chua; Kaihua Yuan; K. Radhakrishnan; Soon Fatt Yoon20002000, vol.21, no.9
Effect of H{sub}2 content on reliability of ultrathin in-situ steam generated (ISSG) SiO{sub}2T. Y. Luo; M. Laughery; G. A. Brown; H. N. Al-Shareef; V. H. C. Watt; A. Karamcheti; M. D. Jackson; H. R. Huff20002000, vol.21, no.9
Fabrication of very high resistivity Si with low loss and cross talkY. H. Wu; K. H. Shih; C. C. Wu; C. P. Liao; S. C. Pai; C. C. Chi; Albert Chin20002000, vol.21, no.9
High breakdown GaN HEMT with overlapping gate structureN. -Q. Zhang; S. Keller; G. Parish; S. Heikman; S. P. DenBaars; U. K. Mishra20002000, vol.21, no.9
High channel density dual operation mode MOS-controlled thyristor with superior current saturation capabilityBudong You; V. A. K. Temple; Alex Q. Huang; Forrest Holroyd20002000, vol.21, no.9
Inversion MOS capacitance extraction for high-leakage dielectrics using a transmission line equivalent circuitDouglas W. Barlage; James T. O'Keeffe; Jack T. Kavalieros; Michael M. Nguyen; Robert S. Chau20002000, vol.21, no.9
Limitation of the Kirchhoff boundary conditions for aerial image simulation in 157-nm optical lithographyMichael S. Yeung; Eytan Barouch20002000, vol.21, no.9
N-type porous silicon doping using phosphorous oxychloride (POCl{sub}3)A. El-Bahar; S. Stolyarova; Y. Nemirovsky20002000, vol.21, no.9
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