期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2000, vol.21, no.1 2000, vol.21, no.10 2000, vol.21, no.11 2000, vol.21, no.12 2000, vol.21, no.2 2000, vol.21, no.3
2000, vol.21, no.4 2000, vol.21, no.5 2000, vol.21, no.6 2000, vol.21, no.7 2000, vol.21, no.8 2000, vol.21, no.9

题名作者出版年年卷期
A new and improved borderless contact (BLC) structure for high-performance Ti-salicide in sub-quarter micron CMOS devicesWen-Chau Liu; Kong-Beng Thei; Wei-Chou Wang; Hsi-Jen Pan; Shou-Gwo Wuu; Ming-Ta Lei; Chung-Shu Wang; Shiou-Ying Cheng20002000, vol.21, no.7
A novel simplified process for fabricating a very high density p-channel trench gate power MOSFETKee Soo Nam; Ju Wook Lee; Sang-Gi Kim; Tae Moon Roh; Hoon Soo Park; Jin Gun Koo; Kyung Ik Cho20002000, vol.21, no.7
Be diffusion in InGaAs/InP heterojunction bipolar transistorsSandeep R. Bahl; Nick Moll; Virginia M. Robbins; Hao-Chung Kuo; Brian G. Moser; Gregory E. Stillman20002000, vol.21, no.7
Electrical characteristics of high quality La{sub}2O{sub}3 gate dielectric with equivalent oxide thickness of 5 AY. H. Wu; M. Y. Yang; Albert Chin; W. J. Chen; C. M. Kwei20002000, vol.21, no.7
High performance fully selective double recess InAlAs/InGaAs/InP HEMT'sS. C. Wang; J. S. Liu; K. C. Hwang; W. Kong; D. W. Tu; P. Ho; L. Mohnnkern; K. Nichols; P. C. Chao20002000, vol.21, no.7
High temperature formed SiGe P-MOSFET's with good device characteristicsY. H. Wu; Albert Chin20002000, vol.21, no.7
High-voltage lateral RESURF MOSFET's on 4H-SiCK. Chatty; S. Banerjee; T. P. Chow; R. J. Gutmann20002000, vol.21, no.7
Interrelationship of voltage and temperature dependence of oxide breakdown for ultrathin oxidesErnest Y. Wu; David L. Harmon; Liang-Kai Han20002000, vol.21, no.7
Novel cleaning solutions for polysilicon film post chemical mechanical polishingTung Ming Pan; Tan Ful Lei; Chao Chyi Chen; Tien Sheng Chao; Ming Chi Liaw; Wen Lu Yang; Ming Shih Tsai; C. P. Lu; W. H. Chang20002000, vol.21, no.7
Room temperature far infrared (8～10 μm) photodetectors using self-assembled InAs quantum dots with high detectivityJong-Wook Kim; Jae-Eung Oh; Seong-Chul Hong; Chung-Hoon Park; Tae-Kyung Yoo20002000, vol.21, no.7
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