期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2000, vol.21, no.1 2000, vol.21, no.10 2000, vol.21, no.11 2000, vol.21, no.12 2000, vol.21, no.2 2000, vol.21, no.3
2000, vol.21, no.4 2000, vol.21, no.5 2000, vol.21, no.6 2000, vol.21, no.7 2000, vol.21, no.8 2000, vol.21, no.9

题名作者出版年年卷期
A novel sacrificial gate stack process for suppression boron penetration in p-MOSFET with shallow BF{sub}2-implanted source/drain extensionSun-Jay Chang; Chun-Yen Chang; Tien-Sheng Chao; Sheng-Zhen Zhong; Wen-Kuan Yeh; Tiao-Yuan Huang20002000, vol.21, no.8
A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in the fully depleted SOI MOSFETZ. Lun; D. S. Ang; C. H. Ling20002000, vol.21, no.8
Can macroscopic oxide thickness uniformity improve oxide reliability?Ernest Y. Wu; Edward J. Nowak; R. -P. Vollertsen20002000, vol.21, no.8
Distributed ESD protection for high-speed integrated circuitsBendik Kleveland; Timothy J. Maloney; Ian Morgan; Liam Madden; Thomas H. Lee; S. Simon Wong20002000, vol.21, no.8
Effect of oxide tunneling on the measurement of MOS interface statesM. Giannini; A. Pacelli; A. L. Lacaita; L. M. Perron20002000, vol.21, no.8
Experimental evidence for quantum mechanical narrow channel effect in ultra-narrow MOSFET'sH. Majima; H. Ishikuro; T. Hiramoto20002000, vol.21, no.8
High performance SONOS memory cells free of drain turn-on and over-erase: compatibility issue with current flash technologyMyung Kwan Cho; Dae M. Kim20002000, vol.21, no.8
Impact cobalt silicidation on the low-frequency noise behavior of shallow P-N junctionsN. B. Lukyanchikova; M. V. Petrichuk; N. Garbar; E. Simoen; A. Poyai; C. Claeys20002000, vol.21, no.8
Inkjet printed copper source/drain metallization for amorphous silicon thin-film transistorsCheong Min Hong; Sigurd Wagner20002000, vol.21, no.8
Modulating HBT's current gain by using externally biased on-ledge Schottky diodePingxi Ma; Yuefei Yang; Peter Zampardi; R. T. Huang; M. F. Chang20002000, vol.21, no.8
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