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期刊
ISSN
0734-2101
刊名
Journal of Vacuum Science & Technology
参考译名
真空科学与技术,A辑:真空、表面与膜
收藏年代
2000~2013
全部
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2005
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2013
2005, vol.23, no.1
2005, vol.23, no.2
2005, vol.23, no.3
2005, vol.23, no.4
2005, vol.23, no.5
2005, vol.23, no.6
题名
作者
出版年
年卷期
Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
S. B. S. Heil; E. Langereis; A. Kemmeren; F. Roozeboom; M. C. M. van de Sanden; W. M. M. Kessels
2005
2005, vol.23, no.4
In situ examination of tin oxide atomic layer deposition using quartz crystal microbalance and Fourier transform infrared techniques
X. Du; Y. Du; S. M. George
2005
2005, vol.23, no.4
Characterization of nitrogen distribution in HfO{sub}2 with low energy secondary ion mass spectrorrsetry
Z. X. Jiang; K. Kim; J. Lerma; D. Sieloff; T. Y. Luo; J. Y. Yang; D. Triyoso; H. Tseng; P. Tobin; N. Ramani
2005
2005, vol.23, no.4
Microstructure and nanohardness properties of Zr-Al-N and Zr-Cr-N thin films
R. Lamni; R. Sanjines; M. Parlinska-Wojtan; A. Karimi; F. Levy
2005
2005, vol.23, no.4
Inhibition of excess interface Si atom generation in 700℃-grown pyrolytic-gas passiveted ultrathin silicon oxide films
Hiroshi Yamada
2005
2005, vol.23, no.4
Enlargement of grain in poly-Si by adding Au in Ni-mediated crystallization of amorphous Si using a SiN{sub}x cap layer
Kyung Ho Kim; Jae Hwan Oh; Eun Hyun Kim; Jin Jang; Jeon Yeon Kang; Kyu Hwan Oh
2005
2005, vol.23, no.4
Sb-induced reconstruction of the Si(112) surface
E. S. Cho; M. K. Kim; H. Hur; J. W. Park; J. Y. Baik; N. H. Kim; C. Y. Park; K. S. An
2005
2005, vol.23, no.4
Adsorption and reactions of tetrabutoxysilane (TBOS) on Si(100)
Nakyung Lee; Kijung Yong; Hyun Suk Jeong; Chang Min Kim
2005
2005, vol.23, no.4
Clean wurtzste InN surfaces prepared with atomic hydrogen
L. F. J. Piper; T. D. Veal; M. Walker; I. Mahboob; C. F. McConville; Hai Lu; W. J. Schaff
2005
2005, vol.23, no.4
Microstructural evolution of AIN coatings synthesized by unbalanced magnetron sputtering
C. C. Wang; C. J. Lu; M. H. Shiao; F. S. Shieu
2005
2005, vol.23, no.4
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