期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2001, vol.22, no.1 2001, vol.22, no.10 2001, vol.22, no.11 2001, vol.22, no.12 2001, vol.22, no.6 2001, vol.22, no.7
2001, vol.22, no.8 2001, vol.22, no.9 2001, vol.22，no.2 2001, vol.22，no.3 2001, vol.22，no.4 2001, vol.22，no.5

题名作者出版年年卷期
Fabrication of depletion-mode GaAs MOSFET with a selective oxidation process by using metal as the maskJau-Yi Wu; Hwei-Heng Wang; Yeong-Her Wang; Mau-Phon Houng20012001, vol.22, no.1
DC and RF characteristics of doped multichannel AlAs{sub}0.56Sb{sub}0.44/In{sub}0.53Ga{sub}0.47As field effect transistors with variable gate-lengthsD. C. Dumka; G. Cueva; H. Hier; O. A. Aina; I. Adesida20012001, vol.22, no.1
Submicron AlInAs/InGaAs HBT with 160 GHz fT at 1 mA collector currentMarko Sokolich; Charles H. Fields; Meena Madhav20012001, vol.22, no.1
Thermally isolated MOSFET for gas sending applicationDanick Briand; Hans Sundgren; Bart van der Schoot; Ingemar Lundstrom; Nicolaas F. de Rooij20012001, vol.22, no.1
Atomic scale effects of zirconium and hafnium incorporation at a model silicon/silicate interface by first principles calculationsAtsushi Kawamoto; John Jameson; Peter Griffin; Kyeongjae Cho; Robert Dutton20012001, vol.22, no.1
Effects of two-step high temperature deuterium anneals on SONOS nonvolatile memory devicesJiankang Bu; Marvin H. White20012001, vol.22, no.1
A proposed single grain-boundary thin-film transistorChang-Ho Oh; Masakiyo Matsumura20012001, vol.22, no.1
To suppress photoexcited current of hydrogenated polysilicon TFTs with low temperature oxidation of polychannelD. N. Yaung; Y. K. Fang; C. H. Chen; C. C. Hung; F. C. Tsao; S. G. Wuu; M. S. Liang20012001, vol.22, no.1
A novel thin-film transistor with self-aligned field induced drainHorng-Chih Lin; C. -M. Yu; C. -Y. Lin; K. -L. Yeh; Tiao-Yuan Huang; Tan-Fu Lei20012001, vol.22, no.1
Hot hole gate current in surface channel PMOSFETsF. Driussi; D. Esseni; L. Selmi; F. Piazza20012001, vol.22, no.1
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