期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2001, vol.22, no.1 2001, vol.22, no.10 2001, vol.22, no.11 2001, vol.22, no.12 2001, vol.22, no.6 2001, vol.22, no.7
2001, vol.22, no.8 2001, vol.22, no.9 2001, vol.22，no.2 2001, vol.22，no.3 2001, vol.22，no.4 2001, vol.22，no.5

题名作者出版年年卷期
Determining dominant breakdown mechanisms in InP HEMTsMark H. Somerville; Chris S. Putnam; Jesus A. del Alamo20012001, vol.22, no.12
New salicidation technology with Ni(Pt) alloy for MOSFETsP. S. Lee; K. L. Pey; D. Mangelinck; J. Ding; D. Z. Chi; L. Chan20012001, vol.22, no.12
Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodesDavid J. Gundlach; LiLi Jia; Thomas N. Jackson20012001, vol.22, no.12
Suppression of boron penetration in P-channel MOSFETs using polycrystalline Si{sub}(1-x-y)Ge{sub}xC{sub}y gate layersE. J. Stewart; M. S. Carroll; James C. Sturm20012001, vol.22, no.12
4H-SiC RF power MOSFETsD. Alok; E. Arnold; R. Egloff; J. Barone; J. Murphy; R. Conrad; J. Burke20012001, vol.22, no.12
Trap energetic and spatial localization in buried-gate 6H-SiC JFETs by means of numerical device simulationG. Verzellesi; G. Meneghesso; A. Cavallini; E. Zanoni20012001, vol.22, no.12
The scaled performance of Si/Si{sub}(1-x)Ge{sub}x resonant tunneling diodesP. See; D. J. Paul20012001, vol.22, no.12
The impact of postbreakdown gate leakage on MOSFET FT performancesLuigi Pantisano; K. P. Cheung20012001, vol.22, no.12
Analog device design for low power mixed mode applications in deep submicron CMOS technologyHemant V. Deshpande; Baohong Cheng; Jason C. S. Woo20012001, vol.22, no.12
Investigating the relationship between electron mobility and velocity in deeply scaled NMOS via mechanical stressAnthony Lochtefeld; Dimitri A. Antoniadis20012001, vol.22, no.12
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