期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2001, vol.22, no.1 2001, vol.22, no.10 2001, vol.22, no.11 2001, vol.22, no.12 2001, vol.22, no.6 2001, vol.22, no.7
2001, vol.22, no.8 2001, vol.22, no.9 2001, vol.22，no.2 2001, vol.22，no.3 2001, vol.22，no.4 2001, vol.22，no.5

题名作者出版年年卷期
Velocity-modulation and transit-time effects in InP/InGaAs HBTsmarcel Rohner; B. willen; H. Jackel20012001, vol.22, no.9
A process for the formation of submicron V-gate by micromachined V-grooves using GaInP/GaAs selective etching techniqueHong-Wei Chiu; Nien-Show Ho; Shey-Shi Lu20012001, vol.22, no.9
Thin inter-polyoxide films for flash memories grown at low temperature (400℃) by oxygen radicalsTatsufumi Hamada; Yuji Saito; Masaki Hirayama; Herzl Aharoni; Tadahiro Ohmi20012001, vol.22, no.9
Carbon-nanotube-based triode-field-emission displays using gated emitter structureFuminori Ito; Yoshinori Tomihari; Yuko Okada; Kazuo Konuma; Akihiko Okamoto20012001, vol.22, no.9
A new polycrystallinc silicon TFT with a single grain boundary in the channelJae-Hong Jeon; Min-Cheol Lee; Kee-Chan park; Min-Koo han20012001, vol.22, no.9
Trap characterization in buried-gate N-Channel 6H-SiC JFETsGaudenzio Meneghesso; A. chini; G. Verzellesi; A. Cavallini; Claudio Canali; Enrico Zanoni20012001, vol.22, no.9
Novel isolation structures for TFSOI technologyMahender Kumar; Yue Tan; Johnny K. O. Sin20012001, vol.22, no.9
A novel single gate MOS controlled current saturated thyristorS. Huang; G. A. J. Amaratunga; F. Udrea20012001, vol.22, no.9
Deuterium passivation of interface traps in MOS devicesKangguo Cheng; Karl Hess; Joseph W. Lyding20012001, vol.22, no.9
Dual work function metal gate CMOS technology using metal interdiffusionIgor Polishchuk; Pushkar Ranade; Tsu-Jae King; Chenming Hu20012001, vol.22, no.9
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