期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2001, vol.22, no.1 2001, vol.22, no.10 2001, vol.22, no.11 2001, vol.22, no.12 2001, vol.22, no.6 2001, vol.22, no.7
2001, vol.22, no.8 2001, vol.22, no.9 2001, vol.22，no.2 2001, vol.22，no.3 2001, vol.22，no.4 2001, vol.22，no.5

题名作者出版年年卷期
300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV{sub}(CEO)≥6VM. W. Dvorak; C. R. Bolognesi; O. J. Pitts; S. P. Watkins20012001, vol.22, no.8
High performance 0.35 μm gate-length monolithic enhancement/depletion-mode metamorphic In{sub}0.52 Al{sub}0.48 As/In{sub}0.53 Ga{sub}0.47 As HEMTs on GaAs substratesD. C. Dumka; W. E. Hoke; P. J. Lemonias; G. Cueva; I. Adesida20012001, vol.22, no.8
Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequencyYoshimi Yamashita; Akira Endoh; Keisuke Shinohara; Masataka Higashiwaki; Kohki Hikosaka; Takashi Mimura; Satoshi Hiyamizu; Toshiaki Matsui20012001, vol.22, no.8
Unilateral power gain limitations due to dynamic base widening effectsB. Willen; M. Rohner; H. Jackel20012001, vol.22, no.8
RESURF AlGaN/GaN HEMT for high voltage power switchingShreepad Karmalkar; Jianyu Deng; Michael S. Shur; Remis Gaska20012001, vol.22, no.8
High-frequency measurements of AlGaN/GaN HEMTs at high temperaturesMitsutoshi Akita; Shigeru Kishimoto; Takashi Mizutani20012001, vol.22, no.8
Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusionC. H. Chen; Y. K. Fang; C. W. Yang; S. F. Ting; Y. S. Tsair; M. C. Yu; T. H. Hou; M. F. Wang; S. C. Chen; C. H. Yu; M. S. Liang20012001, vol.22, no.8
Model of low frequency noise in polycrystalline silicon thin-film transistorsCharalabos A. Dimitriadis; George Kamarinos; Jean Brini20012001, vol.22, no.8
High quality thermal oxide on LPSOI formed by high temperature enhanced MILCAlain Chun-Keung Chan; Hongmei Wang; Mansun J. Chan20012001, vol.22, no.8
High quality gate dielectrics grown by rapid thermal processing using split-N{sub}2O technique on strained-Si{sub}0.91Ge{sub}0.09 FilmsL. K. Bera; W. K. Choi; C. S. Tan; S. K. Samanta; C. K. Maiti20012001, vol.22, no.8
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