期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2001, vol.22, no.1 2001, vol.22, no.10 2001, vol.22, no.11 2001, vol.22, no.12 2001, vol.22, no.6 2001, vol.22, no.7
2001, vol.22, no.8 2001, vol.22, no.9 2001, vol.22，no.2 2001, vol.22，no.3 2001, vol.22，no.4 2001, vol.22，no.5

题名作者出版年年卷期
Demonstration of sub-5 ps CML ring oscillator date delay with reduced parasitic AlInAs/InGaAs HBTMarko Sokolich; Allan R. Kramer; Young Kim Boegeman; Rosanna R. Martinez20012001, vol.22, no.7
A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC-and RF-performanceYong Gui Xie; Seiya Kasai; Hiroshi Takashi; Chao Jiang; Hideki Hasegawa20012001, vol.22, no.7
Optical characteristics of InGaP/GaAs HPTsChung-Kun Song; Sang-Hun Lee; Kang-Dae Kim; Jae-Hong Park; Bon-Won Koo; Do-Hyun Kim; Chang-Hee Hong; Yong-Kyu; Kim; Sung-Bum Hwang20012001, vol.22, no.7
Characterization of polysilicon resistors in Sub-0.25μm CMOS ULSI applicationsWen-Chau Liu; Kong-Beng Thei; Hung-Ming Chung; Kun-Wei LIn; Chin-Chuan Cheng; Yen-Shih Ho; Chi-Wen Su; Shyh-Chyi Wong; Chih-Hsien Lin; Carlos H. Diaz20012001, vol.22, no.7
Electron mobility enhancement in strained-Sin-MOSFETs fabricated on SiGe-on-insulator (SGOI) substratesZhi-Yuan Cheng; Matthew T. Currie; Chris W. Leitz; Gianni Taraschi; Eugene A. Fitzgerald; Judy L. Hoyt; Dimitri A. Antoniadas20012001, vol.22, no.7
Two silicon nitride technologies for Post-SiO{sub}2 MOSFET gate dielectricQiang Lu; Yee Chia Yeo; Kevin J. Yang; Ronald Lin; Igor Polishchuk; Tsu-Jae King; Chenming Hu; S. C. Song; H. F. Luan; Dim-Lee Kwong; Xin Guo; Zhijiong Luo; Xiewen Wang; Tso-Ping Ma20012001, vol.22, no.7
The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 μm CMOS technology and beyondS. F. Ting; Y. K. Fang; C. H. Chen; C. W. Yang; W. T. Hsieh; J. J. Ho; M. C. Yu; S. M. Jang; C. H. Yu; M. S. Liang; S. Chen; R. Shih20012001, vol.22, no.7
Double pocket architecture using indium and boron for sub-100 nm MOSFETsShinji Odanaka; Akira Hiroki; Kyoji Yamashita; Kentaro Nakanishi; Taiji Noda20012001, vol.22, no.7
Frequency-dependent resistive and capacitive components in RF MOSFETsYuhua Cheng; Mishel Matloubian20012001, vol.22, no.7
Stack Gate PZT/Al{sub}2O{sub}3 one transistor ferroelectric memoryAlbert Chin; M. Y. Yang; C. L. Sun; S. Y. Chen20012001, vol.22, no.7
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