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期刊
ISSN
0741-3106
刊名
IEEE Electron Device Letters
参考译名
IEEE电子器件快报
收藏年代
1998~2007
全部
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
1998, vol.19, no.1
1998, vol.19, no.10
1998, vol.19, no.11
1998, vol.19, no.12
1998, vol.19, no.2
1998, vol.19, no.3
1998, vol.19, no.4
1998, vol.19, no.5
1998, vol.19, no.6
1998, vol.19, no.7
1998, vol.19, no.8
1998, vol.19, no.9
题名
作者
出版年
年卷期
A deep submicron Si1-xGex/Si vertical PMOSFET fabricated by Ge Ion implantation
K. C. Liu; S. K. Ray; S. K. Oswal; S. K. Banerjee
1998
1998, vol.19, no.1
A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's
D. S. Ang; C. H. Ling
1998
1998, vol.19, no.1
A novel self-aligned T-shaped gate process for deep submicron Si MOSFET's fabrication
H.-C. Lin; R. Lin; W.-F. Wu; R.-P.Yang; M.-S. Tsai; T.-S.Chao; T.-Y. Huang
1998
1998, vol.19, no.1
Air-gap formation during IMD deposition to lower interconnect capacitance
B. Shieh; K. C. Saraswat; J. P. McVittie; S. List; S. Nag; M. Islamraja; R. H. Havemann
1998
1998, vol.19, no.1
Laser energy limitation for buried metal cuts
J. B. Bernstein; Y. Hua; W. Zhang
1998
1998, vol.19, no.1
Plasma charging damage on ultrathin gate oxides
D. Park; C. Hu
1998
1998, vol.19, no.1
RTD/HFET low standby power SRAM gain cell
J. P. A. van der Wagt; A. C. Seabaugh; E. A. Beam Ⅲ
1998
1998, vol.19, no.1
The importance of electrochemistry-related etching in the gate-groove fabrication for InAlAs/InGaAs HFET's
D. Xu; T. Enoki; Y. Ishii
1998
1998, vol.19, no.1
Theoretical analysis of kink effect in C-V characteristics of indium-implanted NMOS capacitors
P. Bouillon; T. Skotnicki
1998
1998, vol.19, no.1
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