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期刊
ISSN
0741-3106
刊名
IEEE Electron Device Letters
参考译名
IEEE电子器件快报
收藏年代
1998~2007
全部
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
1998, vol.19, no.1
1998, vol.19, no.10
1998, vol.19, no.11
1998, vol.19, no.12
1998, vol.19, no.2
1998, vol.19, no.3
1998, vol.19, no.4
1998, vol.19, no.5
1998, vol.19, no.6
1998, vol.19, no.7
1998, vol.19, no.8
1998, vol.19, no.9
题名
作者
出版年
年卷期
A > 400 GHz fmax transferred-substrate heterojunction bipolar transistor IC technology
Q. Lee; B. Agarwal; D. Mensa; R. Pullela; J. Guthrie; L. Samoska; M. J. W. Rodwell
1998
1998, vol.19, no.3
A multilevel approach toward quadrupling the density of flash memory
David L. Kencke; Robert Richart; Shyam Garg; Sanjay K. Banerjee
1998
1998, vol.19, no.3
Electrostatic adhesion testing of thin metallizations
D. L. Callahan; H. Yang; F. R. Brotzen; A. J. Griffin, Jr.; C. F. Dunn
1998
1998, vol.19, no.3
Evaluation of plasma charging damage in ultrathin gate oxides
Horng-Chih Lin; Chi-Chun Chen; Chao-Hsing Chien; Szu-Kang Hsein; Meng-Fan Wang; Tien-Sheng Chao
1998
1998, vol.19, no.3
High-speed and low-power operation of a resonant tunneling logic gate MOBILE
Koichi Maezawa; Hideaki Matsuzaki; Masafumi Yamamoto; Taiichi Otsuji
1998
1998, vol.19, no.3
High-transconductance delta-doped InAs/AlSb HFET's with ultrathin silicon-doped InAs quantum well donor layer
C. R. Bolognesi; M. W. Dvorak; D. H. Chow
1998
1998, vol.19, no.3
P-type 4H and 6H-SiC high-voltage Schottky barrier diodes
R. Raghunathan; B. J. Baliga
1998
1998, vol.19, no.3
Self-heating in high-power AlGaN-GaN HFET's
R. Gaska; A. Osinsky; J. W. Yang; M. S. Shur
1998
1998, vol.19, no.3
Transistor operation of 30-nm gate-length EJ-MOSFET's
Hisao Kawaura; Toshitsugu Sakamoto; Toshio Baba; Yukinori Ochiai; Jun'ichi Fujita; Shinji Matsui
1998
1998, vol.19, no.3
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