期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1998, vol.19, no.1 1998, vol.19, no.10 1998, vol.19, no.11 1998, vol.19, no.12 1998, vol.19, no.2 1998, vol.19, no.3
1998, vol.19, no.4 1998, vol.19, no.5 1998, vol.19, no.6 1998, vol.19, no.7 1998, vol.19, no.8 1998, vol.19, no.9

题名作者出版年年卷期
A physical model for the correlation between holding voltage and holding current in epitaxial CMOS latch-upMing-Jer Chen; Hun-Shung Lee; Jyh-Huei Chen; Chin-Shan Hou; Chaun-Sheng Lin; Yeh-Ning Jou19981998, vol.19, no.8
Back-gated buried oxide MOSFET's in a high-voltage bipolar technology for bonded oxide/SOI interface characterizationR. Bashir; F. Wang; W. Greig; J. M. McGrgor; W. Yindeepol; J. De Santis19981998, vol.19, no.8
Boron diffusion and penetration in ultrathin oxide with poly-Si gateMin Cao; Paul Vande Voorde; Mike Cox; Wayne Greene19981998, vol.19, no.8
Collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT'sGuofu Niu; John D. Cressler; Usha Gogineni; David L. Harame19981998, vol.19, no.8
Electrical properties of N2O/NH3 plasma grown oxynitride on strained-SiL. K. Bera; S. K.. Ray; M. Mukhopadhyay; D. K. Nayak; N. Usami; Y. Shiraki; C. K. Maiti19981998, vol.19, no.8
Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFET'sF. Ren; J. M. Kou; M. Hong; W. S. Hobson; J. R. Lothian; J. Lin; H. S. Tsai; J. P. Mannaerts19981998, vol.19, no.8
Improved reliability of NO-Nitrided SiO2 grown on p- type 4H-SiCHui-Feng Li; Sima Dimitrijev; H. Barry Harrison19981998, vol.19, no.8
InAlAs/InGaAs channel composition modulated transistors with InAs channel and AlAs/InAs superlattice barrier layerK. Onda; A. Fujihara; A. Wakejima; E. Mizuki; T. Nakayama; H. Miyamoto; Y. Ando; M. Kanamori19981998, vol.19, no.8
Initial degradation of base-emitter junction in carbon-doped InP/InGaAs HBT's under bias and temperature stressKenji Kurishima; Shoji Yamahata; Hiroki Nakajima; Hiroshi Ito; Noriyuki Watanabe19981998, vol.19, no.8
Low-temperature single-crystal Si TFT's fabricated on Si films processed via sequential lateral solidificationM. A. Crowder; P. G. Carey; P. M. Smith; Robert S. Sposili; Hans S. Cho; James S. Im19981998, vol.19, no.8
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