期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1998, vol.19, no.1 1998, vol.19, no.10 1998, vol.19, no.11 1998, vol.19, no.12 1998, vol.19, no.2 1998, vol.19, no.3
1998, vol.19, no.4 1998, vol.19, no.5 1998, vol.19, no.6 1998, vol.19, no.7 1998, vol.19, no.8 1998, vol.19, no.9

题名作者出版年年卷期
2.6 kV 4H-SiC Lateral DMOSFET'sJ. Spitz; M. R. Melloch; J. A. Cooper, Jr.; M. A. Capano19981998, vol.19, no.4
A dual-metal-trench Schottky pinch-rectifier in 4H-SiCK. J. Schoen; J. P. Henning; J. M. Woodall; J. A. Cooper, Jr.; M. R. Melloch19981998, vol.19, no.4
Back-gate bias enhanced band-to-band tunneling leakage in scaled MOSFET'sMing-Jer Chen; Huan-Tsung Huang; Chin-Shan Hou; Kuo-Nan Yang19981998, vol.19, no.4
Channel length independent subthreshold characteristics in submicron MOSFET'sH. S. Shin; C. Lee; S. W. Hwang; B. G. Park; Y. J. Park; H. S. Min19981998, vol.19, no.4
Enhancement mode metal-semiconductor field effect transistors from thin-film polycrystalline diamondHui Jin Looi; Lisa Y. S. Pang; Yanyang Wang; Michael D. Whitfield; Richard B. Jackman19981998, vol.19, no.4
Fully self-aligned tri-layer α-Si:H thin-film transistors with deposited doped contact layerDaniel B. Thomasson; Thomas N. Jackson19981998, vol.19, no.4
High reliability InGaP/GaAs HBTN. Pan; J. Elliott; M. Knowles; D. P. Vu; K. Kishimoto; J. K. Twynam; H. Sato; M. T. Fresina19981998, vol.19, no.4
Microwave low-noise AlGaAs/InGaAs HBT's with p+ -regrown base contactsH. Dodo; Y. Amamiya; T. Niwa; M. Mamada; N. Goto; H. Shimawaki19981998, vol.19, no.4
Noncontacting measurement of thickness of thin titanium silicide films using spectroscopic ellipsometerS. Kal; I. Kasko; H. Ryssel19981998, vol.19, no.4
Nonscaling of MOSFET's linear resistance in the deep submicrometer regimeD. Esseni; H. Iwai; M. Saito; B. Ricco19981998, vol.19, no.4
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