期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1998, vol.19, no.1 1998, vol.19, no.10 1998, vol.19, no.11 1998, vol.19, no.12 1998, vol.19, no.2 1998, vol.19, no.3
1998, vol.19, no.4 1998, vol.19, no.5 1998, vol.19, no.6 1998, vol.19, no.7 1998, vol.19, no.8 1998, vol.19, no.9

题名作者出版年年卷期
A new gradual hole injection dual-gate LIGBTByeong-Hoon Lee; Jung-Hoon Chun; Seong-Dong Kim; Dae-Seok Byeon; Won-Oh Lee; Min-Koo Han; Yearn-Ik Choi19981998, vol.19, no.12
A short-term high-current-density reliability investigation of AlGaAs/GaAs heterojunction bipolar transistorsNicola Bovolon; R. Schultheis; J. -E. Muller; P. Zwicknagl; Enrico Zanoni19981998, vol.19, no.12
CB-BRT: A new base resistance-controlled thyristor employing a self-aligned corrugated P-BaseDae-Seok Byeon; Byeong-Hoon Lee; Doo-Young Kim; Min-Koo Han; Yearn-Ik Choi19981998, vol.19, no.12
Characteristics of InAlAs/InGaAs high electron mobility transistors under 1.3-μm laser illuminationYoshifumi Takanashi; Kiyoto Takahata; Yoshifumi Muramoto19981998, vol.19, no.12
Comprehensive analysis of reverse short-channel effect in silicon MOSFET's from low-temperature operationB. Szelag; F. Balestra; Gerard Ghibaudo19981998, vol.19, no.12
Effects of die location on hot-carrier response of plasma-etched NMOS devicesV. Janapaty; M. Oner; B. L. Bhuva; N. Bui; S. E. Kerns19981998, vol.19, no.12
Flicker noise in GaN/Al{}0.15Ga{}0.85N doped channel heterostructure field effect transistorsA. Balandin; S. Cai; R. Li; K. L. Wang; V. Ramgopal Rao; C. R. Viswanathan19981998, vol.19, no.12
GaAs metal insulator field effect transistors with excellent intrinsic transconductance and stable drain currents using(NH{}4){}2S{}x chemical treatmentK. Remashan; K. N. Bhat19981998, vol.19, no.12
High-performance polycrystalline SiGe thin-film transistors using Al{}2O{}3 gate insulatorsZhonghe Jin; Hoi S. Kwok; Man Wong19981998, vol.19, no.12
High-voltage accumulation-layer UMOSFET's in 4H-SiCJ. Tan; J. A. Cooper, Jr.; M. R. Melloch19981998, vol.19, no.12
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