期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1998, vol.19, no.1 1998, vol.19, no.10 1998, vol.19, no.11 1998, vol.19, no.12 1998, vol.19, no.2 1998, vol.19, no.3
1998, vol.19, no.4 1998, vol.19, no.5 1998, vol.19, no.6 1998, vol.19, no.7 1998, vol.19, no.8 1998, vol.19, no.9

题名作者出版年年卷期
A new erasing method for a single-voltage long-endurance flash memoryR. Bez; D. Cantarelli; L. Moioli; G. Ortolani; G. Servalli; C. Villa; M. Dallabora19981998, vol.19, no.2
DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substratesA. T. Ping; Q. Chen; J. W. Yang; M. Asif Khan; I. Adesida19981998, vol.19, no.2
GaAa MESFET fabrication without using photoresistKumar Shiralagi; Raymond Tsui; Herbert Goronkin19981998, vol.19, no.2
High Al-content AlGaN/GaN MODFET's for ultrahigh performanceY. -F. Wu; B. P. Keller; P. Fini; S. Keller; T. J. Jenkins; L. T. Kehias; S. P. Denbaars19981998, vol.19, no.2
High-power microwave 0.25-um gate doped-channel GaN/AlGaN heterostructure field effect transistorQ. Chen; J. W. Yang; R. Gaska; M. Asif Khan; Michael S. Shur; G. J. Sullivan; A. L. Sailor19981998, vol.19, no.2
Low-frequency noise in near-fully-depleted TFSOI MOSFET'sJeffrey A. Babcock; Dieter K. Schroder; Ying-Che Tseng19981998, vol.19, no.2
Polycrystal isolation of InGaP/GaAs HBT's to reduce collector capacitanceKazuhiro Mochizuki; Kiyoshi Ouchi; Kohji Hirata; Tomonori Tanoue; Tohru Oka; Hiroshi Masuda19981998, vol.19, no.2



制造业外文文献服务平台