期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1998, vol.19, no.1 1998, vol.19, no.10 1998, vol.19, no.11 1998, vol.19, no.12 1998, vol.19, no.2 1998, vol.19, no.3
1998, vol.19, no.4 1998, vol.19, no.5 1998, vol.19, no.6 1998, vol.19, no.7 1998, vol.19, no.8 1998, vol.19, no.9

题名作者出版年年卷期
Characterization of bolometers based on polycrystalline silicon germanium alloysS. Sedky; P. Fiorini; M. Caymax; C. Baert; L. Hermans; R. Mertens19981998, vol.19, no.10
Effect of Schottky barrier alteration on the low-frequency noise of InP-based HEMT'sH. van Meer; M. Valenza; K. van der Zhanden; W. D. Raedt; E. Simoen; D. Schreurs; L. Kanufmann19981998, vol.19, no.10
Generalized scale length for two-dimensional effects in MOSFET'sD. J. Frank; Y. Taur; Hon-Sum P. Wong19981998, vol.19, no.10
Low-frequency noise characterization of latent damage in thin oxides subjected to high-field impulse stressingW. K. Chim; B. P. Yeo; P. S. Lim; D. S. H. Chan19981998, vol.19, no.10
Polarity-dependent tunneling current and oxide breakdown in dual-gate CMOSFET'sY. Shi; T. P. Ma; S. Prasad; S. Dhanda19981998, vol.19, no.10
Schottky-contact gated-four-probe a-Si:H TFT structure: A new structure to investigate the electrical instability of a-Si:H TFTChun-Sung Chiang; Chun-ying Chen; J. Kanicki19981998, vol.19, no.10
Terahertz detector utilizing tow-dimensional electronic fluidJian-Qiang Lu; M. S. Shur; J. L. Hesler; L. Sun; R. Weikle19981998, vol.19, no.10
Tunneling leakage current in ultrathin (<4nm) nitride/oxide stack dielectricsYing Shi; Xiewen Wang; T. P. Ma19981998, vol.19, no.10
Ultralow-voltage boron-doped diamond field emitter vacuum diodeW. P. Kang; A. Wisitsora-at; J. L. Davidson; D. V. Kerns19981998, vol.19, no.10
Ultrathin nitride/oxide (N/O) gate dielectrics for p&&+-polysilicon gated PMOSFET's prepared by a combined remote plasma enhanced CVD/thermal oxidation processY. Wu; G. Lucovsky19981998, vol.19, no.10



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