期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1998, vol.19, no.1 1998, vol.19, no.10 1998, vol.19, no.11 1998, vol.19, no.12 1998, vol.19, no.2 1998, vol.19, no.3
1998, vol.19, no.4 1998, vol.19, no.5 1998, vol.19, no.6 1998, vol.19, no.7 1998, vol.19, no.8 1998, vol.19, no.9

题名作者出版年年卷期
A new simple and reliable method to form a textured Si surface for the fabrication of a tunnel oxide filmKow-Ming Chang; Chii-Horng Li; Bao-Sheng Sheih; Ji-Yi Yang; Shih-Wei Wang; Ta-Hsun Yeh19981998, vol.19, no.5
Effects of buried layer geometry on characteristics of double polysilicon bipolar transistorsKenneth K. O.; Brad W. Scharf19981998, vol.19, no.5
Empirical correlation between AC kink and low-frequency noise overshoot in SOI MOSFET'sYing-Che; Tseng; Wen-Ling M. Huang; Pamela J. Welch; Jenny M. Ford; Jason C. S. Woo19981998, vol.19, no.5
Improvement of electron emission efficiency and stability by surface application of molybdenum silicide onto gated poly-Si field emittersHyung Soo Uh; Byung Gook Park; Jong Duk Lee19981998, vol.19, no.5
Monitoring of TiSi2 formation on narrow polycrystalline silicon lines using Raman spectroscopyE. H. Lim; G. Karunasiri; S. J. Chua; H. Wong; K. L. Pey; K. H. Lee19981998, vol.19, no.5
New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFET'sBogdan Georgescu; Marcel A. Py; Abdelkader souifi; Georg Post; Gerard Guillot19981998, vol.19, no.5
Novel self-aligned Ti silicide process for scaled CMOS technologies with low sheet resistance at 0.06-μm gate lengthsJorge A. Kittl; Q. Z. Hong; M. Rodder; T. Breedijk19981998, vol.19, no.5
Reliable extraction of MOS interface traps from low-frequency CV measurementsA. Pacelli; A. L. Lacaita; S. Villa; L. Perron19981998, vol.19, no.5
Suppression of cobalt silicide agglomeration using nitrogen (N2+) implantationWein-Town Sun; Ming-Chi Liaw; Charles Ching-Hsiang Hsu19981998, vol.19, no.5



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