期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1998, vol.19, no.1 1998, vol.19, no.10 1998, vol.19, no.11 1998, vol.19, no.12 1998, vol.19, no.2 1998, vol.19, no.3
1998, vol.19, no.4 1998, vol.19, no.5 1998, vol.19, no.6 1998, vol.19, no.7 1998, vol.19, no.8 1998, vol.19, no.9

题名作者出版年年卷期
A new metal-to-metal antifuse with amorphous carbonS. Liu; D. Lamp; S. Gangopadhyay; G. Sreenivas; S. S. Ang; H. A. Naseem19981998, vol.19, no.9
AC Floating-body effects in submicron fully depleted(FD) SOI nMOSFET's and the impact on analog applicationsYing-Che Tseng; W. Margaret Huang; Dennis C. Diaz; Jenny M. Ford; Jason C. S. Woo19981998, vol.19, no.9
Capacitance engineering for InP-based heterostructure barrier varactorE. Lheurette; X. Melique; P. Mounaix; F. Mollot; O. Vanbesien; D. Lippens19981998, vol.19, no.9
Deposition of uniform Zr-Sn-Ti-O films by on-axis reactive sputteringRobert B. van Dover; L. F. Schneemeyer19981998, vol.19, no.9
Device analysis for a-Si:H thin-film transistors with organic passivation layerJung-Kee Yoon; Jeong-Hyun Kim19981998, vol.19, no.9
Enhanced hot-carrier induced degradation in shallow trench isolated narrow channel PMOSFET'sJone F. Chen; Kazunari Ishimaru; Chenming Hu19981998, vol.19, no.9
Excellent low-pressure-oxidized Si3N4 films on roughened poly-Si for high-density DRAM'sHan-Wen Liu; Huang-Chung Cheng19981998, vol.19, no.9
Gate-induced drain-leakage in buried-channel PMOS--a limiting factor in development of low-cost, high-performance 3.3-V, 0.25-μm technologyRamin Ghodsi; Shahin Sharifzadeh; Jithender Majjiga19981998, vol.19, no.9
InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltageM. Zaknoune; B. Bonte; C. Gaquiere; Y. Cordier; Y. Druelle; D. Theron; Y. Crosnier19981998, vol.19, no.9
Leakage current comparison between ultra- thin Ta2O5 films and conventional gate dielectricsQiang Lu; Donggun Park; Alexander Kalnitsky; Celene Chang; Chia-Cheng Cheng; Sing Pin Tay;19981998, vol.19, no.9
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